Snapback avoidance design flow for a memory technology - ppt video online download
Figure 1 from Modeling MOS snapback for circuit-level ESD simulation using BSIM3 and VBIC models | Semantic Scholar
Bipolar effects in snapback mechanism in advanced n-FET transistors under high current stress conditions - IOPscience
I-V characteristics showing snap-back (Point 'A' Pre Snapback and Point... | Download Scientific Diagram
DRIP SOME TRANSISTOR ALIEN EMBROIDERED SPACE HAT SNAPBACK VGC | eBay
Bipolar effects in snapback mechanism in advanced n-FET transistors under high current stress conditions - IOPscience
Figure 2 from Effect Of body bias and temperature on snapback for a SOI-LDMOS transistor | Semantic Scholar
MODELING NMOS SNAPBACK CHARACTERISTIC USING PSPICE 1. Introduction 2. NMOS SNAPBACK
Time to say farewell to the snapback ggNMOS for ESD protection – SOFICS – Solutions for ICs
Bipolar effects in snapback mechanism in advanced n-FET transistors under high current stress conditions - IOPscience
ggNMOS (grounded-gated NMOS) – SOFICS – Solutions for ICs
Snapback-Free Reverse-Conducting SOI LIGBT with an Integrated Self-Biased MOSFET | Discover Nano
The Transistor: An Indispensable ESD Protection Device - Part 2 - In Compliance Magazine
Modeling MOS snapback and parasitic bipolar action for circuit-level ESD and high current simulations | Semantic Scholar
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Snapback behavior determines ESD protection effectiveness - SemiWiki
Figure 3 from A Study of Snapback and Parasitic Bipolar Action for ESD NMOS Modeling | Semantic Scholar
High Trigger Current NPN Transistor With Excellent Double-Snapback Performance for High-Voltage Output ESD Protection | Semantic Scholar
Source/Drain Junction Partition in MOS Snapback Modeling for ESD Simulation
Bipolar effects in snapback mechanism in advanced n-FET transistors under high current stress conditions
GGNMOS ESD Protection Simulation
Snapback-Free Reverse-Conducting SOI LIGBT with an Integrated Self-Biased MOSFET | Discover Nano
Time to say farewell to the snapback ggNMOS for ESD protection – SOFICS – Solutions for ICs
Snapback-Free Reverse-Conducting SOI LIGBT with an Integrated Self-Biased MOSFET | Discover Nano
14.5.1 ESD Performance from 3.3V NMOS transistor — GlobalFoundries GF180MCU PDK 0.0.0-111-gde3240d documentation
A snapback-free and high-speed SOI LIGBT with double trenches and embedded fully NPN structure
